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China claims sub-1 nm transistor that cuts power use for AI chips
A team of Chinese researchers has built a ferroelectric transistor with a gate length of just 1 nanometer that runs on 0.6 ...
Scientists from RWTH Aachen University, AMO GmbH, AIXTRON SE, and EPFL have demonstrated power detectors based on Molybdenum disulphide (MoS 2) that operate at zero bias.
Engineering researchers have demonstrated a new transistor that switches at only 0.1 volts and reduces power dissipation by over 90 percent compared to state-of-the-art silicon transistors. One of the ...
Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics ...
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Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers
Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Quantum-tunneling junction technology promises to enable production of smaller, more efficient, and easier-to-produce semiconductors for digital, analog, and power applications. In case you missed the ...
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