Japanese scientists have developed a spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) device with the world’s lowest write power in a significant step toward energy-efficient, ...

This low-symmetry material produces powerful spin-orbit torque (SOT)—a key mechanism for manipulating magnetism in next-generation memory and logic technologies. MINNEAPOLIS / ST. PAUL (07/18/2025) — ...

For decades, ferromagnetic materials have driven technologies like magnetic hard drives, magnetic random access memories and oscillators. But antiferromagnetic materials, if only they could be ...

(a)Working principle of the spin logic device. (b) Transition among diverse magnetic configurations in this heterojunction. By manipulating the direction of the Oersted field, the SOT-induced ...

A new technical paper titled “Modeling and Optimization of Two-Terminal Spin-Orbit-Torque MRAM” was published by researchers at Georgia Institute of Technology, MIT, and Cornell University. “This ...

A new technical paper titled “Efficient Magnetization Switching via Orbital-to-Spin Conversion in Cr/W-Based Heterostructures” by researchers at National Taiwan University and TSMC. “A highly ...

Today, I want to walk you through a deceptively simple innovation from the lab at Loughborough University (PI: Prof Marco ...