Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by ...
(Nanowerk News) Researchers from National Taiwan University have developed an ultra-high performance STT-MRAM, called SS-MARM or SL-STT-MARM. The SS-MARM can simultaneously achieve ultra-high MR ratio ...
FREMONT, Calif.--(BUSINESS WIRE)--Spin Transfer Technologies, Inc., the leading developer of advanced STT-MRAM for embedded SRAM and stand-alone DRAM applications, today announced results of its ...
“With PMA we are capable of delivering good STT-MRAM performance down to 7×10^-10 write-error-rate with 10 nanosecond pulses using switching currents of only 7.5 microampere. This could never be done ...
CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions ...
Magneto-resistive random access memory (MRAM) is a non-volatile memory technology that relies on the (relative) magnetization state of two ferromagnetic layers to store binary information. Throughout ...
Alexander Driskill-Smith, Senior Director of Strategic Memory Planning at Samsung Electronics, talks to AZoM about the Samsung open innovation program in STT-MRAM (SGMI), STT-MRAM technology and ...
A research team has successfully developed 128Mb-density STT-MRAM (spin-transfer torque magnetoresistive random access memory) with a write speed of 14 ns for use in embedded memory applications, such ...
New technologies often take a long time to come into common use, if they ever do. Sometimes the time has to be right, the need great enough. With the increasing use of IoT technology, the rise of AI ...
The IEEE puts on a series of conferences that focus on semiconductor devices, heterogenous integration and other nanotechnologies, with sessions on solid state memory technologies. These include the ...
Editor’s note: This work was first presented at the 2011 IEEE International Electron Devices Meeting (IEDM) and appears here courtesy of the IEEE. For more information about IEDM 2012 (San Francisco, ...
MRAM is gaining traction in a variety of designs as a middle-level type of memory, but there are reasons why it took so long to bring this memory to market. A typical magnetoresistive RAM architecture ...
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