The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
Its rated maximum input is 36V, but that limit is imposed entirely by the integrated FET drivers. We extend the input range of the regulator by bypassing the integrated FET drivers, and use the ...
An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
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