Power supplies with N+1 redundancy require the use of an ORing diode or FET to isolate the main supply from the output bus in case of failure. Although ORing diodes are easy to use, the power loss ...
It has long been known that the simple combination of a depletion-mode MOSFET (and before these were available, a JFET) and a resistor made a simple, serviceable current source such as that seen on ...
A new technical paper, “Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors,” was published by researchers at Sandia National ...
For the PDF version of this article, click here. Protecting power transistors against overcurrent failure has always been a challenging issue in power circuit design. In order to protect against even ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “SSM14N956L,” a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in ...
Toshiba is test-sampling shipments of the TW007D120E, 1,200V trench-gate SiC mosfet primarily intended for power supply ...
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