With the trend from Si IGBT to SiC MOSFET in electric vehicle (EV) power electronics, the junction temperature is expected to increase from 150°C to 175°C with the potential to exceed 200°C. This ...

BOSTON, June 5, 2024 /PRNewswire/ -- Thermal management for EV power electronics has long posed significant challenges. The ongoing shift from Si IGBT and SiC MOSFET to potentially GaN HEMT in the ...

Tolerating heat and helping to reduce it are both attributes that sintering offers as an alternative to soldering in power electronics applications. Doing more with less and, of course, packing more ...

Electronic packaging and assembly is the basic technology to link the small dimensions of the IC to an interconnecting substrate - usually the Printed Circuit Board / Printed Wiring Board (PCB / PWB) ...

Thermal management for EV power electronics has long posed significant challenges. The ongoing shift from Si IGBT and SiC MOSFET to potentially GaN HEMT in the future results in higher junction ...

Recently, copper selenide (Cu 2-δ Se) 11, 12, 13, 14, 15 and copper sulfide (Cu 2-δ S) 16, 17 with liquid-like characteristics were shown to be excellent TE ...

Despite cost advantages, the IDTechEx report " Thermal Management for EV Power Electronics 2024-2034: Forecasts, Technologies, Markets, and Trends " identifies barriers hindering the widespread ...